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| Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 Features * Usable Gain to 6.0 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 23.0 dB Typical at 1.0 GHz * Low Noise Figure: 3.0 dB Typical at 1.0 GHz * Cost Effective Ceramic Microstrip Package 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. 35 micro-X Package[1] Description The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 gain block above The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0836. Note: 1. Short leaded 36 package available upon request. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9596E 6-414 MSA-0835, -0836 Absolute Maximum Ratings Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature [4] Absolute Maximum[1] 80 mA 750 mW +13 dBm 200C -65C to 200C Thermal Resistance[2,5]: jc = 175C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5.7 mW/C for TC > 69C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions: Id = 36 mA, ZO = 50 Power Gain (|S21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 to 3.0 GHz f = 1.0 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 22.0 Typ. 32.5 23.0 10.5 2.0:1 1.5:1 Max. 25.0 VSWR NF P1 dB IP3 tD Vd dV/dT Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient dB dBm dBm psec V mV/C 7.0 3.0 12.5 27.0 125 7.8 -17.0 8.4 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0835 MSA-0836-BLK MSA-0836-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information, see "Tape and Reel Packaging for Semiconductor Devices". 6-415 MSA-0835, -0836 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .63 .58 .49 .40 .35 .33 .30 .30 .32 .34 .38 .39 .41 .52 -17 -33 -56 -70 -80 -89 -111 -133 -150 -170 175 162 132 95 32.5 31.5 29.1 26.7 24.6 22.9 19.5 16.9 14.9 13.2 11.7 10.5 7.9 5.8 42.02 37.52 28.50 21.54 17.01 13.98 9.45 7.03 5.53 4.56 3.86 3.33 2.47 1.94 161 145 119 103 92 82 64 48 39 26 14 2 -21 -45 -37.7 -33.7 -29.7 -27.9 -26.0 -24.9 -22.1 -20.2 -19.2 -18.3 -17.5 -16.7 -15.6 -14.6 .013 .021 .033 .040 .050 .057 .079 .098 .110 .122 .133 .146 .165 .187 55 47 54 55 53 52 51 44 42 36 32 27 19 7 .63 .56 .42 .32 .24 .18 .09 .07 .06 .06 .08 .12 .21 .20 -19 -37 -66 -84 -98 -107 -126 -141 -166 -106 -100 -101 -113 -149 0.72 0.73 0.72 0.78 0.85 0.89 0.95 0.99 1.04 1.06 1.08 1.08 1.10 1.05 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 35 30 Gain Flat to DC 25 G p (dB) Id (mA) 20 15 10 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 2 4 6 Vd (V) 8 10 10 5 10 30 35 TC = +125C TC = +25C TC = -55C 35 0.1 GHz 30 0.5 GHz 25 G p (dB) 1.0 GHz 20 2.0 GHz 15 4.0 GHz 20 20 30 I d (mA) 40 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 24 Gp (dB) 23 22 21 P1 dB (dBm) 13 12 P1 dB 11 10 NF (dB) 4 3 2 -55 -25 +25 +85 +125 NF P1 dB (dBm) 16 I d = 40 mA 14 GP 12 10 8 I d = 36 mA NF (dB) 4.5 4.0 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 3.0 6 I d = 20 mA 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) 4 0.1 TEMPERATURE (C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-416 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 1 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 A08 RF INPUT 6-417 |
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